2N4275-18
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N4275-18
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Mounting Method
terminal
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Terminal Circle Diameter
0.135 inches nominal
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Semiconductor Material
silicon
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Current Rating Per Characteristic
100.00 milliamperes minimum collector current,dc and 500.00 milliamperes maximum collector current,dc
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Terminal Type And Quantity
3 uninsulated wire lead
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Inclosure Material
plastic
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Overall Length
0.210 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.205 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
t0-92
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Internal Junction Configuration
npn
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~1
base voltage,static,collector open
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Voltage Rating In Volts Per Characteristic
40.0 maximum collector to base voltage/static/emitter open and 40.0 maximum collector to emitter reverse voltage,with base short-circuited to emitter and 15.0 maximum collector-to-emitter,substaining voltage,base open-circuited and 4.5 maximum emitter to
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Power Rating Per Characteristic
0.5 milliwatts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius ambient air