SD306EE

Technical Characteristics

• Terminal Length

  0.500 inches minimum

• Channel Polarity And Control Type

  n-channel insulated gate type 1st transistor

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-72

• Internal Junction Configuration

  pn 2nd semiconductor device diode

• Component Name And Quantity

  2 semiconductor device diode and 1 transistor

• Semiconductor Material

  silicon all semiconductor

• Maximum Operating Temp Per Measurement Point

  125.0 deg celsius ambient air

• Terminal Type And Quantity

  4 uninsulated wire lead

• Inclosure Material

  metal

• Overall Length

  0.210 inches maximum

• Overall Diameter

  0.230 inches maximum

• Internal Configuration

  field effect-dual gate 1st transistor

• Internal Configuration

  junction contact 2nd semiconductor device diode

• Mounting Method

  terminal

• Terminal Circle Diameter

  0.100 inches nominal

• Voltage Rating In Volts Per Characteristic

  20.0 maximum drain to source voltage all semiconductor and 20.0 maximum gate to substrate voltage

• Current Rating Per Characteristic

  50.00 milliamperes maximum drain current all semiconductor

• Power Rating Per Characteristic

  1.2 watts maximum total power dissipation all semiconductor