M38510/20402BEB

Technical Characteristics

• Case Outline Source And Designator

  d-2 mil-m-38510

• Word Quantity

  512

• Output Logic Form

  transistor-transistor logic

• Inclosure Configuration

  dual-in-line

• Features Provided

  programmable and schottky and monolithic and bipolar and w/active pull-up and 3-state output

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Maximum Power Dissipation Rating

  794.0 milliwatts

• Body Length

  0.840 inches maximum

• Test Data Document

  96906-mil-std-883 standard

• Unpackaged Unit Weight

  2.2 grams

• Voltage Rating And Type Per Characteristic

  m0.5 volts minimum power source and 7.0 volts maximum power source

• Terminal Type And Quantity

  16 printed circuit

• Memory Device Type

  prom

• Time Rating Per Chacteristic

  85.00 nanoseconds maximum propagation delay time,low to high level output and 85.00 nanoseconds maximum propagation delay time,high to low level output

• Terminal Surface Treatment

  solder

• Bit Quantity

  2048

• Input Circuit Pattern

  10 input

• Inclosure Material

  ceramic

• Operating Temp Range

  m55.0/p125.0 deg celsius

• Body Height

  0.185 inches maximum

• Body Width

  0.220 inches minimum and 0.310 inches maximum