6010513-003

Semiconductor Devices and Associated Hardware

TRANSISTOR

6010513-003

5961-01-168-6505

5961 - Semiconductor Devices and Associated Hardware

Bae Systems National Security

TRANSISTOR

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Technical Characteristics

  • Channel Polarity And Control Type (Non-Core)

    n-channel insulated gate type

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-204aa

  • Power Rating Per Characteristic

    40.0 watts small-signal input power, common-collector absolute

  • Overall Length

    1.563 inches maximum

  • Overall Width

    1.050 inches maximum

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    8.00 amperes zero-gate-voltage source current megawatts

  • Terminal Type And Quantity

    2 pin and 1 case

  • Mounting Facility Quantity

    2

  • Inclosure Material

    metal and ceramic

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Internal Configuration

    field effect

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 4.0 maximum gate to source threshold voltage

  • Overall Height

    0.350 inches nominal

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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