6010513-003
Semiconductor Devices and Associated Hardware
TRANSISTOR
6010513-003
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-204aa
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Power Rating Per Characteristic
40.0 watts small-signal input power, common-collector absolute
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Overall Length
1.563 inches maximum
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Overall Width
1.050 inches maximum
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Semiconductor Material
silicon
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Current Rating Per Characteristic
8.00 amperes zero-gate-voltage source current megawatts
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Inclosure Material
metal and ceramic
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Mounting Method
unthreaded hole
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Internal Configuration
field effect
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 4.0 maximum gate to source threshold voltage
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Overall Height
0.350 inches nominal