S82S131F/883B
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
S82S131F/883B
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Inclosure Material
ceramic
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Precious Material And Location
terminal surface option gold
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Inclosure Configuration
dual-in-line
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Word Quantity (Non-Core)
512
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Terminal Surface Treatment
gold
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Output Logic Form
transistor-transistor logic
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Maximum Power Dissipation Rating
794.0 milliwatts
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Operating Temp Range
-55.0/+125.0 deg celsius
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Features Provided
programmed and monolithic and bipolar and burn in and schottky and w/active pull-up and 3-state output
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Precious Material
gold
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Voltage Rating And Type Per Characteristic
-0.5 volts minimum power source and 7.0 volts maximum power source
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Body Length
0.740 inches minimum and 0.870 inches maximum
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Time Rating Per Chacteristic
70.00 nanoseconds maximum propagation delay time, low to high level output and 70.00 nanoseconds maximum propagation delay time, high to low level output
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Body Height
0.120 inches minimum and 0.185 inches maximum
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Bit Quantity (Non-Core)
2048
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Input Circuit Pattern
10 input
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Terminal Type And Quantity
16 printed circuit
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Storage Temp Range
-65.0/+150.0 deg celsius
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Memory Device Type
rom
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Body Width
0.220 inches minimum and 0.310 inches maximum