RF1000R
Semiconductor Devices and Associated Hardware
TRANSISTOR
RF1000R
5961 - Semiconductor Devices and Associated Hardware
Trw Electronics And Defense Sector
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Diameter
0.300 inches maximum
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Internal Configuration
junction contact
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Internal Junction Configuration
npn
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Mounting Method
press fit
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Power Rating Per Characteristic
5.0 watts maximum total power dissipation
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Precious Material And Location
terminals gold
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Terminal Type And Quantity
4 ribbon
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Precious Material
gold
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Current Rating Per Characteristic
425.00 milliamperes maximum collector current, dc
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Voltage Rating In Volts Per Characteristic
45.0 maximum collector to base voltage/static/emitter open and 35.0 maximum breakdown voltage, collector to emitter, sustained and 3.5 maximum emitter to base voltage, static, collector open
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Overall Length
0.200 inches maximum