911AS8129

Technical Characteristics

• Semiconductor Material

  silicon

• Overall Height

  0.350 inches maximum

• Features Provided

  hermetically sealed case

• Special Features

  junction pattern arrangement: npn

• Voltage Rating In Volts Per Characteristic

  80.0 maximum collector to base voltage, dc and 80.0 maximum collector to emitter voltage/static/base open and 5.0 maximum emitter to base voltage, dc

• Electrode Internally-Electrically Connected To Case

  collector

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-3

• Mounting Facility Quantity

  2

• Terminal Type And Quantity

  2 uninsulated wire lead and 1 case

• Internal Configuration

  junction contact-darlington connected

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Power Rating Per Characteristic

  100.0 watts small-signal input power, common-collector preset

• Overall Length

  1.563 inches nominal

• Mounting Method

  unthreaded hole

• Inclosure Material

  metal

• Test Data Document

  30003-911as8129 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Overall Width

  1.050 inches nominal

• Current Rating Per Characteristic

  10.00 amperes source cutoff current maximum and 200.00 milliamperes source cutoff current minimum

• Transfer Ratio

  4.0 maximum static forward current transfer ratio, common-emitter