M38510/20101BJB

Technical Characteristics

• Maximum Power Dissipation Rating

  575.0 milliwatts

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Bit Quantity (Non-Core)

  512

• Case Outline Source And Designator

  d-3 mil-m-38510

• Terminal Surface Treatment

  solder

• Time Rating Per Chacteristic

  140.00 nanoseconds maximum propagation delay time, low to high level output and 140.00 nanoseconds maximum propagation delay time, high to low level output

• Inclosure Material

  ceramic and glass

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Body Length

  1.290 inches maximum

• Voltage Rating And Type Per Characteristic

  5.5 volts nominal power source

• Output Logic Form

  transistor-transistor logic

• Body Width

  0.500 inches minimum and 0.610 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Word Quantity (Non-Core)

  64

• Input Circuit Pattern

  8 input

• Body Height

  0.210 inches nominal

• Features Provided

  bipolar and programmable and monolithic and hermetically sealed and w/open collector