1RF9133

Technical Characteristics

• Inclosure Material

  metal

• Overall Length

  1.573 inches maximum

• Overall Width

  1.050 inches maximum

• Mounting Facility Quantity

  2

• Mounting Method

  unthreaded hole

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• ~1

  -20.0 maximum gate to source voltage

• Current Rating Per Characteristic

  -6.00 amperes maximum drain current

• Power Rating Per Characteristic

  75.0 watts maximum total device dissipation

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Terminal Type And Quantity

  2 unthreaded hole and 1 case

• Overall Height

  0.250 inches maximum

• End Item Identification

  5840-01-122-3404

• Internal Configuration

  field effect

• Channel Polarity And Control Type

  p-channel insulated gate type

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-3

• Voltage Rating In Volts Per Characteristic

  -60.0 maximum drain to source voltage and 60.0 maximum drain to gate voltage and