RFP15N12
Semiconductor Devices and Associated Hardware
TRANSISTOR
RFP15N12
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Mounting Facility Quantity
1
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Terminal Type And Quantity
3 uninsulated wire lead
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-220ab
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Overall Width
0.420 inches maximum
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Semiconductor Material
silicon
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Inclosure Material
plastic
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Current Rating Per Characteristic
30.00 amperes source cutoff current maximum of standard range
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Power Rating Per Characteristic
75.0 watts small-signal input power, common-collector major
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Overall Height
0.190 inches maximum
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Overall Length
0.625 inches maximum
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Voltage Rating In Volts Per Characteristic
100.0 maximum drain to source voltage and 100.0 maximum drain to gate voltage
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Mounting Method
unthreaded hole
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Internal Configuration
field effect