2N5493
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5493
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Inclosure Material
plastic and metal
-
Electrode Internally-Electrically Connected To Case
collector
-
Mounting Facility Quantity
1
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-220aa
-
Overall Width
0.420 inches maximum
-
Current Rating Per Characteristic
7.00 amperes source cutoff current maximum and 3.00 amperes source cutoff current minimum
-
Overall Height
0.612 inches maximum
-
Power Rating Per Characteristic
50.0 watts small-signal input power, common-collector preset
-
Internal Configuration
junction contact
-
Special Features
junction pattern arrangement: npn
-
Overall Length
0.730 inches maximum
-
Transfer Ratio
100.0 maximum static forward current transfer ratio, common-emitter
-
Semiconductor Material
silicon
-
Voltage Rating In Volts Per Characteristic
5.0 maximum emitter to base voltage, static, collector open and 75.0 maximum collector to base voltage/static/emitter open and 65.0 maximum collector-to-emitter, resistance between base and emitter
-
Specification/Standard Data
80131-release6145a professional/industrial association specification
-
Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
-
Mounting Method
unthreaded hole
-
Terminal Type And Quantity
3 pin