7849108P1

Technical Characteristics

• Bit Quantity (Non-Core)

  1024

• Output Logic Form

  transistor-transistor logic

• Voltage Rating And Type Per Characteristic

  5.5 volts nominal power source

• Inclosure Configuration

  dual-in-line

• Time Rating Per Chacteristic

  75.00 nanoseconds maximum propagation delay time, low to high level output and 75.00 nanoseconds maximum propagation delay time, high to low level output

• Specification/Standard Data

  81349-mil-m-38510/203(usaf) government specification

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• ~1

  data on certain environmental and performanc

• Inclosure Material

  ceramic and glass

• Terminal Surface Treatment

  solder

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Body Length

  0.840 inches maximum

• Memory Device Type

  rom

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Terminal Type And Quantity

  16 printed circuit

• Body Height

  0.140 inches minimum and 0.185 inches maximum

• Input Circuit Pattern

  10 input

• Features Provided

  w/enable and hermetically sealed and monolithic and positive outputs and schottky and programmable and w/decoded output and bipolar and programmed and w/buffered output

• Maximum Power Dissipation Rating

  739.0 milliwatts

• Case Outline Source And Designator

  d-2 mil-m-38510

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Word Quantity (Non-Core)

  256