2N3066
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3066
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.205 inches maximum
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Internal Configuration
field effect
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
terminal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
9.5 maximum peak-point voltage and 50.0 maximum breakdown voltage,gate-to-source,with all other terminals short-circuited to source
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Current Rating Per Characteristic
100.00 milliamperes maximum gate current
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Terminal Type And Quantity
3 uninsulated wire lead
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius case
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.225 inches maximum
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Channel Polarity And Control Type
n-channel junction type
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-18
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Terminal Circle Diameter
0.110 inches maximum
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Power Rating Per Characteristic
300.0 milliwatts maximum total power dissipation