RFD6002-DM30P
Semiconductor Devices and Associated Hardware
TRANSISTOR
RFD6002-DM30P
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
35.0 watts small-signal input power, common-collector preset
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Precious Material
gold
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Overall Length
0.800 inches nominal
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Overall Width
0.750 inches nominal
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Overall Height
0.225 inches nominal
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Current Rating Per Characteristic
3.00 amperes source cutoff current maximum
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Semiconductor Material
silicon
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Precious Material And Location
external surfaces gold
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Transfer Ratio
120.0 maximum static forward current transfer ratio, common-emitter
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Terminal Type And Quantity
4 ribbon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Mounting Method
press fit
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Voltage Rating In Volts Per Characteristic
50.0 maximum collector to base voltage/static/emitter open and 25.0 maximum collector to emitter voltage/static/base open and 4.0 maximum emitter to base voltage, static, collector open