SES462
Semiconductor Devices and Associated Hardware
TRANSISTOR
SES462
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
700.0 maximum breakdown voltage, collector-to-base, emitter open and 300.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Power Rating Per Characteristic
125.0 watts small-signal input power, common-collector absolute
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Overall Height
0.350 inches nominal
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Overall Length
1.573 inches maximum
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Specification/Standard Data
12115-8103-7121 manufacturers source control
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Internal Configuration
junction contact
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End Item Identification
radar bomb directing set an/tpb-1d
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Special Features
junction pattern arrangement: npn
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Current Rating Per Characteristic
10.00 amperes source cutoff current maximum
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Overall Width
1.050 inches maximum
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Semiconductor Material
silicon
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction