M38510/20802BJB

Technical Characteristics

• Memory Device Type

  rom

• Voltage Rating And Type Per Characteristic

  m0.5 volts minimum power source and 7.0 volts maximum power source

• Case Outline Source And Designator

  d-3 mil-m-38510

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Operating Temp Range

  m55.0/p125.0 deg celsius

• Maximum Power Dissipation Rating

  1.0 watts

• Body Height

  0.210 inches maximum

• Terminal Type And Quantity

  24 printed circuit

• Test Data Document

  96906-mil-std-883 standard

• Time Rating Per Chacteristic

  90.00 nanoseconds maximum propagation delay time,low to high level output and 90.00 nanoseconds maximum propagation delay time,high to low level output

• Terminal Surface Treatment

  solder

• Word Quantity

  512

• Bit Quantity

  4096

• Input Circuit Pattern

  13 input

• Output Logic Form

  transistor-transistor logic

• Inclosure Configuration

  dual-in-line

• Inclosure Material

  ceramic

• Features Provided

  bipolar and schottky and programmable

• Body Width

  0.500 inches minimum and 0.610 inches maximum

• Body Length

  1.290 inches maximum