IDT6116LA120DB

Technical Characteristics

• Inclosure Configuration

  dual-in-line

• Terminal Surface Treatment

  solder

• Maximum Power Dissipation Rating

  1.0 watts

• Inclosure Material

  ceramic

• Case Outline Source And Designator

  d-3 mil-m-38510

• Memory Device Type

  rom

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Features Provided

  burn in and monolithic and static operation and w/enable and hermetically sealed and bidirectional

• Input Circuit Pattern

  22 input

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• End Item Identification

  an/gpn-22(v) radar data transfer,subsystem

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Body Width

  0.500 inches minimum and 0.610 inches maximum

• Time Rating Per Chacteristic

  120.00 nanoseconds maximum propagation delay time, low to high level output and 120.00 nanoseconds maximum propagation delay time, high to low level output

• Body Height

  0.210 inches maximum

• Bit Quantity (Non-Core)

  16384

• Body Length

  1.290 inches maximum

• Terminal Type And Quantity

  24 printed circuit

• Word Quantity (Non-Core)

  2048