587R136H02
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
587R136H02
5962 - Microcircuits, Electronic
Northrop Grumman Systems Corporation
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Features Provided
monolithic and hermetically sealed and burn in and positive outputs
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Voltage Rating And Type Per Characteristic
-0.5 volts minimum power source and 6.1 volts maximum power source
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Operating Temp Range
-55.0/+125.0 deg celsius
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Precious Material And Location
case and terminal surfaces gold
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Current Rating Per Characteristic
91.00 milliamperes reverse current, dc absolute
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Body Width
0.700 inches nominal
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Memory Device Type
pal
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Precious Material
gold
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Storage Temp Range
-65.0/+150.0 deg celsius
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Inclosure Configuration
beam chip
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Terminal Surface Treatment
solder
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Maximum Power Dissipation Rating
500.0 milliwatts
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Terminal Type And Quantity
64 beam lead
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Inclosure Material
metal
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Body Height
0.100 inches maximum
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Body Length
0.700 inches nominal
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Output Logic Form
transistor-transistor logic