8002259-430

Technical Characteristics

• Overall Length

  1.252 inches maximum

• Overall Height

  0.250 inches maximum

• Overall Width

  0.700 inches maximum

• Mounting Facility Quantity

  2

• Electrode Internally-Electrically Connected To Case

  drain

• Features Provided

  electrostatic sensitive

• Semiconductor Material

  silicon

• Current Rating Per Characteristic

  12.00 amperes maximum off-state current,dc and 30.00 amperes maximum off-state current,peak

• Power Rating Per Characteristic

  75.0 watts maximum total power dissipation

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Internal Configuration

  field effect

• Channel Polarity And Control Type

  n-channel insulated gate type

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-66

• Mounting Method

  unthreaded hole

• Voltage Rating In Volts Per Characteristic

  100.0 maximum drain to source voltage and 20.0 maximum gate to source voltage

• Terminal Type And Quantity

  2 pin and 1 case

• Inclosure Material

  metal

• Function For Which Designed

  switching