IVN5000SND-TX
Semiconductor Devices and Associated Hardware
TRANSISTOR
IVN5000SND-TX
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.230 inches maximum
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Electrode Internally-Electrically Connected To Case
drain
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Channel Polarity And Control Type (Non-Core)
n-channel junction type
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
35.0 maximum drain to source voltage and 35.0 maximum drain to gate voltage
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Current Rating Per Characteristic
0.90 amperes source cutoff current maximum of standard range
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Terminal Length
0.500 inches minimum
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Overall Length
0.150 inches maximum
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Power Rating Per Characteristic
1.25 watts small-signal input power, common-collector absolute
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Internal Configuration
field effect
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Inclosure Material
metal
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Terminal Circle Diameter
0.100 inches nominal