808740-4

Technical Characteristics

• ~1

  type data on certain environmental and performa

• Voltage Rating In Volts Per Characteristic

  500.0 maximum drain to gate voltage and 500.0 maximum drain to source voltage and 20.0 maximum gate to source voltage

• Semiconductor Material

  silicon

• Overall Height

  0.360 inches maximum

• Power Rating Per Characteristic

  150.0 watts small-signal input power, common-collector preset

• Specification/Standard Data

  81349-mil-prf-19500/543 government specification

• Mounting Facility Quantity

  2

• Terminal Type And Quantity

  2 uninsulated wire lead and 1 case

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Mounting Method

  unthreaded hole

• Internal Configuration

  field effect

• Inclosure Material

  metal

• Current Rating Per Characteristic

  12.00 amperes zero-gate-voltage source current any acceptable and 48.00 amperes forward current, average any acceptable

• Channel Polarity And Control Type (Non-Core)

  n-channel insulated gate type

• Test Data Document

  81349-mil=prf-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general

• Overall Length

  1.573 inches maximum

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-204aa

• Electrode Internally-Electrically Connected To Case

  drain

• Overall Width

  1.050 inches maximum