D60T504010
Semiconductor Devices and Associated Hardware
TRANSISTOR
D60T504010
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Overall Length
1.257 inches maximum
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Voltage Rating In Volts Per Characteristic
550.0 maximum collector to base voltage/static/emitter open and 475.0 maximum collector to emitter voltage, dc and 7.0 maximum emitter to base voltage, static, collector open
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Thread Series Designator
unf
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Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Test Data Document
18355-1d49839 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Power Rating Per Characteristic
590.0 watts small-signal input power, common-collector preset
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Semiconductor Material
silicon
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Overall Width Across Flats
1.212 inches minimum and 1.252 inches maximum
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Current Rating Per Characteristic
20.00 amperes source cutoff current minimum and 100.00 amperes source cutoff current maximum
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Inclosure Material
metal