JAN2N918
Semiconductor Devices and Associated Hardware
TRANSISTOR
JAN2N918
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Inclosure Material
metal
-
Internal Configuration
junction contact
-
Internal Junction Configuration
npn
-
Terminal Circle Diameter
0.100 inches nominal
-
Features Provided
hermetically sealed case
-
Semiconductor Material
silicon
-
Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage,collector-to-base,emitter open and 15.0 maximum breakdown voltage,collector-to-emitter,base open and 3.0 maximum emitter to base voltage,static,collector open
-
Power Rating Per Characteristic
200.0 milliwatts maximum collector power dissipation
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Overall Length
0.210 inches maximum
-
Terminal Length
0.500 inches minimum
-
Overall Diameter
0.230 inches maximum
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-72
-
Electrode Internally-Electrically Connected To Case
gate
-
Mounting Method
terminal
-
Current Rating Per Characteristic
50.00 milliamperes maximum collector current,dc