JAN2N918

Semiconductor Devices and Associated Hardware

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JAN2N918

5961-01-181-9044

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

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Technical Characteristics

  • Inclosure Material

    metal

  • Internal Configuration

    junction contact

  • Internal Junction Configuration

    npn

  • Terminal Circle Diameter

    0.100 inches nominal

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    30.0 maximum breakdown voltage,collector-to-base,emitter open and 15.0 maximum breakdown voltage,collector-to-emitter,base open and 3.0 maximum emitter to base voltage,static,collector open

  • Power Rating Per Characteristic

    200.0 milliwatts maximum collector power dissipation

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Overall Length

    0.210 inches maximum

  • Terminal Length

    0.500 inches minimum

  • Overall Diameter

    0.230 inches maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-72

  • Electrode Internally-Electrically Connected To Case

    gate

  • Mounting Method

    terminal

  • Current Rating Per Characteristic

    50.00 milliamperes maximum collector current,dc

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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