12BB174

Technical Characteristics

• ~1

  open all transistor

• Voltage Rating In Volts Per Characteristic

  250.0 maximum breakdown voltage, collector-to-emitter, base open all transistor and 300.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter all transistor and 7.0 maximum breakdown voltage, emitter-to-base, collector

• Component Function Relationship

  matched

• Overall Length

  1.062 inches minimum all transistor and 1.245 inches maximum all transistor

• Semiconductor Material

  silicon all transistor

• Internal Junction Configuration

  npn all transistor

• Features Provided

  hermetically sealed case

• Terminal Type And Quantity

  3 tab, solder lug all transistor

• Current Rating Per Characteristic

  10.00 amperes source cutoff current maximum all transistor

• Internal Configuration

  junction contact all transistor

• Mounting Facility Quantity

  1 all transistor

• Thread Series Designator

  unf all transistor

• Nominal Thread Size

  0.250 inches all transistor

• Inclosure Material

  metal all transistor

• Overall Width Across Flats

  0.667 inches minimum all transistor and 0.687 inches maximum all transistor

• Power Rating Per Characteristic

  75.0 watts small-signal input power, common-collector minor all transistor

• Component Name And Quantity

  4 transistor

• Mounting Method

  threaded stud all transistor

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-61 all transistor

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius junction all transistor