72032S
Semiconductor Devices and Associated Hardware
TRANSISTOR
72032S
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Height
0.225 inches nominal
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Overall Width
0.405 inches nominal
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Internal Configuration
junction contact
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Mounting Method
press fit
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Semiconductor Material
silicon
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~1
ector to emitter reverse voltage, with base short-circuited to emitter and 3.5 m
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~2
aximum emitter to base voltage, static, collector open
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~1
lliamperes maximum collector cutoff current, dc, with base short-circuited to em
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Current Rating Per Characteristic
5.00 milliamperes maximum collector cutoff current, dc, emitter open and 8.00 mi
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Transfer Ratio
120.0 maximum static forward current transfer ratio, common-emitter
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Precious Material And Location
external surfaces gold
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Overall Length
0.900 inches nominal
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End Item Identification
radar system an/fps-117
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Internal Junction Configuration
npn
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Features Provided
hermetically sealed case
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Voltage Rating In Volts Per Characteristic
65.0 maximum collector to base voltage/static/emitter open and 65.0 maximum coll
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~2
itter
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Power Rating Per Characteristic
500.0 watts maximum total device dissipation
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Precious Material
gold
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Terminal Type And Quantity
2 uninsulated wire lead and 2 flange