14BB105

Technical Characteristics

• Mounting Method

  threaded stud

• Mounting Facility Quantity

  1

• Thread Series Designator

  unf

• Voltage Rating In Volts Per Characteristic

  350.0 maximum breakdown voltage, collector-to-emitter, base open and 400.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter and 20.0 maximum emitter to base voltage, static, collector open

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Features Provided

  hermetically sealed case

• Current Rating Per Characteristic

  10.00 amperes source cutoff current maximum

• Semiconductor Material

  silicon

• Overall Length

  1.245 inches maximum

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Power Rating Per Characteristic

  100.0 watts small-signal input power, common-collector preset

• Transfer Ratio

  90.0 maximum static forward current transfer ratio, common-emitter

• Inclosure Material

  metal

• Overall Width Across Flats

  0.687 inches maximum

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-61

• Nominal Thread Size

  0.250 inches

• Terminal Type And Quantity

  3 tab, solder lug and 1 threaded stud