15-09605-01

Technical Characteristics

• Inclosure Material

  metal

• Internal Configuration

  junction contact

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  80.0 maximum breakdown voltage, collector-to-base, emitter open and 80.0 maximum breakdown voltage, collector-to-emitter, base open

• Power Rating Per Characteristic

  30.0 watts maximum total device dissipation

• Special Features

  junction pattern arrangement: pnp

• Mounting Method

  terminal

• Current Rating Per Characteristic

  1.00 amperes maximum base current, dc and 1.00 amperes maximum collector current, dc

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction