2N6450
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N6450
5961 - Semiconductor Devices and Associated Hardware
Texas Instruments Incorporated
TRANSISTOR
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Technical Characteristics
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Internal Configuration
field effect
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Mounting Method
terminal
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Voltage Rating In Volts Per Characteristic
200.0 maximum drain to gate voltage and m200.0 maximum gate to source voltage
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Inclosure Material
metal
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Overall Length
0.260 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.370 inches maximum
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Channel Polarity And Control Type
n-channel junction type
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Terminal Circle Diameter
0.200 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Current Rating Per Characteristic
10.00 milliamperes maximum forward gate current
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Power Rating Per Characteristic
800.0 milliwatts maximum total device dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Type And Quantity
3 uninsulated wire lead