IRF150

Technical Characteristics

• Semiconductor Material

  silicon

• Overall Width

  1.050 inches maximum

• Current Rating Per Characteristic

  28.00 amperes source cutoff current maximum of standard range

• Power Rating Per Characteristic

  150.0 watts small-signal input power, common-collector preset

• Terminal Type And Quantity

  2 pin and 1 case

• Mounting Facility Quantity

  2

• Mounting Method

  unthreaded hole

• Internal Configuration

  field effect

• Precious Material And Location

  terminal surface option gold

• Inclosure Material

  metal

• Voltage Rating In Volts Per Characteristic

  100.0 maximum drain to gate voltage and 100.0 maximum drain to source voltage and 20.0 maximum gate to source voltage

• Overall Height

  0.450 inches maximum

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius ambient air

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-3

• Channel Polarity And Control Type (Non-Core)

  n-channel insulated gate type

• Test Data Document

  07187-8500065 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Overall Length

  1.573 inches maximum