TD-200

Technical Characteristics

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  60.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum emitter to base voltage, static, collector open

• Current Rating Per Characteristic

  500.00 milliamperes maximum collector current, dc

• Transfer Ratio

  350.0 maximum small-signal short-circuit forward current transfer ratio, common-emitter

• Terminal Type And Quantity

  3 uninsulated wire lead

• Power Rating Per Characteristic

  200.0 milliwatts maximum total power dissipation

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Special Features

  junction pattern arrangement: npn

• Inclosure Material

  metal

• Overall Length

  0.335 inches maximum

• Iii End Item Identification

  simulator an/ulq-13

• Internal Configuration

  junction contact

• Mounting Method

  terminal

• Terminal Length

  0.500 inches minimum

• Overall Diameter

  0.375 inches maximum