IDT6167S85CB

Technical Characteristics

• Test Data Document

  96906-mil-std-883 standard

• Unpackaged Unit Weight

  2.4 grams

• Memory Device Type

  ram

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Terminal Surface Treatment

  solder

• Word Quantity

  16384

• Bit Quantity

  16384

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• End Item Identification

  receiving set,countermeasures an/wlq-4(v)

• Storage Temp Range

  -65.0 to 150.0 deg celsius

• Operating Temp Range

  -55.0 to 125.0 deg celsius

• Maximum Power Dissipation Rating

  1.0 watts

• Body Height

  0.210 inches maximum

• Terminal Type And Quantity

  20 printed circuit

• Time Rating Per Chacteristic

  85.00 nanoseconds maximum propagation delay time, low to high level output and 85.00 nanoseconds maximum propagation delay time, high to low level output

• Input Circuit Pattern

  17 input

• Inclosure Configuration

  dual-in-line

• Inclosure Material

  ceramic

• Features Provided

  hermetically sealed and burn in and high speed and 3-state output and static operation

• Body Width

  0.310 inches maximum

• Body Length

  0.970 inches maximum