2N5337
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5337
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Voltage Rating In Volts Per Characteristic
6.0 maximum emitter to base voltage, static, collector open and 80.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open
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Overall Length
0.260 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-39
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Overall Diameter
0.370 inches maximum
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Internal Configuration
junction contact
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Test Data Document
18876-13229793 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Special Features
junction pattern arrangement: npn
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Features Provided
burn in and hermetically sealed case
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Power Rating Per Characteristic
6.0 watts small-signal input power, common-collector absolute
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Semiconductor Material
silicon
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Transfer Ratio
240.0 maximum static forward current transfer ratio, common-emitter
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Terminal Length
0.500 inches minimum
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Current Rating Per Characteristic
5.00 amperes source cutoff current maximum and 1.00 amperes source cutoff current minimum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal