1M6312AMD-63S210

Technical Characteristics

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  -4.0 volts minimum power source and 11.0 volts maximum power source

• Terminal Type And Quantity

  18 printed circuit

• Maximum Power Dissipation Rating

  500.0 milliwatts

• Terminal Surface Treatment

  solder

• Features Provided

  hermetically sealed and electrostatic sensitive and low power and high speed and w/enable

• Inclosure Material

  ceramic

• Memory Device Type

  rom

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Bit Quantity (Non-Core)

  12288

• Body Width

  0.285 inches minimum and 0.295 inches maximum

• Body Length

  0.880 inches minimum and 0.910 inches maximum

• Body Height

  0.145 inches minimum and 0.175 inches maximum

• Input Circuit Pattern

  16 input

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Word Quantity (Non-Core)

  1024