PDS1009

Technical Characteristics

• Overall Width Across Flats

  0.687 inches maximum

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-61

• Nominal Thread Size

  0.250 inches

• Power Rating Per Characteristic

  125.0 watts small-signal input power, common-collector absolute

• Mounting Method

  threaded stud

• Mounting Facility Quantity

  1

• Thread Series Designator

  unf

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Terminal Type And Quantity

  3 tab, solder lug

• Features Provided

  hermetically sealed case

• Voltage Rating In Volts Per Characteristic

  9.0 maximum breakdown voltage, emitter-to-base, collector open and 500.0 maximum breakdown voltage, collector-to-base, emitter open and 400.0 maximum breakdown voltage, collector-to-emitter, base open

• Semiconductor Material

  silicon

• Transfer Ratio

  35.0 maximum static forward current transfer ratio, common-emitter

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Overall Length

  1.330 inches maximum

• Current Rating Per Characteristic

  10.00 amperes source cutoff current maximum and 5.00 amperes source cutoff current minimum

• Inclosure Material

  metal