2N2849-1
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2849-1
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Junction Configuration
npn
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Mounting Method
terminal
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~1
m breakdown voltage, collector-to-emitter, base open and 5.0 maximum emitter to
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-base, emitter open and 80.0 maximu
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Power Rating Per Characteristic
850.0 milliwatts maximum total power dissipation
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~1
mitter
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Length
0.165 inches nominal
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Terminal Length
1.500 inches minimum
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Overall Diameter
0.350 inches maximum
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Internal Configuration
junction contact
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Terminal Circle Diameter
0.200 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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~2
base voltage, static, collector open
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Current Rating Per Characteristic
3.00 amperes maximum collector current, dc
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Transfer Ratio
40.0 maximum small-signal short-circuit forward current transfer ratio, common-e