SD214EE/883B

Semiconductor Devices and Associated Hardware

TRANSISTOR

SD214EE/883B

5961-01-197-4820

5961 - Semiconductor Devices and Associated Hardware

Philips Semiconductors Inc

TRANSISTOR

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Technical Characteristics

  • Channel Polarity And Control Type (Non-Core)

    n-channel insulated gate type

  • Mounting Method

    terminal

  • Overall Diameter

    0.230 inches maximum

  • Voltage Rating In Volts Per Characteristic

    40.0 maximum drain to gate voltage and 20.0 maximum drain to source voltage and 40.0 maximum gate to source voltage

  • Test Data Document

    15280-44-063735 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

  • Overall Length

    0.210 inches maximum

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius ambient air

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    50.00 milliamperes source cutoff current maximum of standard range

  • Terminal Length

    0.500 inches minimum

  • Power Rating Per Characteristic

    1.2 watts small-signal input power, common-collector preset

  • Internal Configuration

    field effect

  • Inclosure Material

    metal

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Terminal Circle Diameter

    0.100 inches nominal

Certified to
AS6081 Methods

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