012134-1DBR

Technical Characteristics

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-3

• Overall Length

  1.573 inches maximum

• Transfer Ratio

  50.0 maximum static forward current transfer ratio, common-emitter

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Voltage Rating In Volts Per Characteristic

  300.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open and 300.0 maximum breakdown voltage, collector-to-emitter, base open

• Features Provided

  hermetically sealed case

• Overall Width

  1.050 inches maximum

• Semiconductor Material

  silicon

• Terminal Type And Quantity

  2 pin and 1 case

• Mounting Facility Quantity

  2

• Current Rating Per Characteristic

  10.00 amperes source cutoff current maximum and 2.00 amperes source cutoff current minimum

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Mounting Method

  unthreaded hole

• Inclosure Material

  metal

• Power Rating Per Characteristic

  175.0 watts small-signal input power, common-collector minimum

• Overall Height

  0.450 inches maximum