585R596H01

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICES,UNITIZED

585R596H01

5961-01-198-1915

5961 - Semiconductor Devices and Associated Hardware

Northrop Grumman Systems Corporation

SEMICONDUCTOR DEVICES,UNITIZED

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Diameter

    0.353 inches nominal

  • Component Name And Quantity

    4 transistor

  • Mounting Method

    terminal

  • ~1

    ector to base voltage/static/emitter open and 5.0 maximum emitter to base voltag

  • ~2

    e, static, collector open all transistor

  • Power Rating Per Characteristic

    450.0 milliwatts maximum total power dissipation all transistor

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius ambient air

  • Test Data Document

    97942-585r596 drawing

  • Terminal Type And Quantity

    12 uninsulated wire lead

  • Overall Length

    0.175 inches nominal

  • Terminal Length

    0.500 inches minimum

  • Internal Configuration

    junction contact all transistor

  • Internal Junction Configuration

    npn all transistor

  • Terminal Circle Diameter

    0.230 inches nominal

  • Semiconductor Material

    silicon all transistor

  • Voltage Rating In Volts Per Characteristic

    40.0 maximum collector to emitter voltage/static/base open and 50.0 maximum coll

  • Current Rating Per Characteristic

    50.00 milliamperes maximum collector current, dc all transistor

Certified to
AS6081 Methods

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