8001807-435

Technical Characteristics

• Maximum Power Dissipation Rating

  853.0 milliwatts

• Operating Temp Range

  m55.0/p125.0 deg celsius

• Inclosure Material

  ceramic or glass or metal

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic

• Bit Quantity

  4096

• Word Quantity

  1024

• Terminal Surface Treatment

  solder

• Time Rating Per Chacteristic

  40.00 nanoseconds maximum propagation delay time,low to high level output and 40.00 nanoseconds maximum propagation delay time,high to low level output

• Memory Device Type

  rom

• Terminal Type And Quantity

  24 printed circuit

• Body Length

  1.290 inches maximum

• Body Height

  0.210 inches maximum

• Body Width

  0.245 inches minimum and 0.285 inches maximum

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Features Provided

  electrostatic sensitive and bipolar and hermetically sealed

• Input Circuit Pattern

  14 input

• Voltage Rating And Type Per Characteristic

  m0.5 volts minimum power source and 7.0 volts maximum power source

• Test Data Document

  07187-8001807 drawing