645A685H01

Technical Characteristics

• Word Quantity (Non-Core)

  256

• Time Rating Per Chacteristic

  300.00 nanoseconds maximum propagation delay time, low to high level output and 300.00 nanoseconds maximum propagation delay time, high to low level output

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Voltage Rating And Type Per Characteristic

  -1.0 volts minimum power source and 6.0 volts maximum power source

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Input Circuit Pattern

  16 input

• Body Length

  0.880 inches minimum and 0.920 inches maximum

• Body Height

  0.140 inches minimum and 0.165 inches maximum

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Memory Device Type

  ram

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic and glass

• Body Width

  0.265 inches minimum and 0.310 inches maximum

• Terminal Type And Quantity

  18 printed circuit

• Inclosure Configuration

  dual-in-line

• Bit Quantity (Non-Core)

  1024

• Features Provided

  programmable and hermetically sealed and high voltage and static operation