SPTX513-2
Semiconductor Devices and Associated Hardware
TRANSISTOR
SPTX513-2
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Thread Series Designator
unf
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector absolute
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-emitter, base open
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Transfer Ratio
25.0 minimum static forward current transfer ratio, common-emitter and 120.0 maximum static forward current transfer ratio, common-emitter
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Terminal Type And Quantity
3 tab, solder lug
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Overall Width Across Flats
0.865 inches nominal
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Current Rating Per Characteristic
50.00 amperes zero-gate-voltage source current blank
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Semiconductor Material
silicon
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Nominal Thread Size
0.312 inches
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Overall Length
1.462 inches nominal
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Inclosure Material
metal and glass
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-63