F20025A
Semiconductor Devices and Associated Hardware
TRANSISTOR
F20025A
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
point contact
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Special Features
junction pattern arrangement: pnp
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Voltage Rating In Volts Per Characteristic
100.0 nominal breakdown voltage, collector-to-base, emitter open and 100.0 nominal breakdown voltage, collector-to-emitter, base open
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Current Rating Per Characteristic
1.00 amperes all primaries minimum and 3.00 amperes all primaries blank
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Features Provided
quality assurance level txv and burn in and hermetically sealed case
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Power Rating Per Characteristic
15.0 watts collector power dissipation peak
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End Item Identification
armament,fire control,an/asq-165
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius ambient air
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Semiconductor Material
silicon
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Overall Length
0.240 inches minimum and 0.260 inches maximum
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Terminal Type And Quantity
3 pin
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Mounting Method
press fit
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Inclosure Material
metal