IRFF9130-2
Semiconductor Devices and Associated Hardware
TRANSISTOR
IRFF9130-2
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
-100.0 maximum on-state drain to source voltage and 20.0 maximum gate to source voltage
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Internal Configuration
field effect
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Inclosure Material
metal
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Current Rating Per Characteristic
-6.50 amperes source cutoff current maximum of standard range and -6.50 amperes repetitive peak forward current minor
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Test Data Document
96214-2690111 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Overall Length
0.260 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-39
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Overall Diameter
0.370 inches maximum
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
25.0 watts small-signal input power, common-collector absolute
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Semiconductor Material
silicon
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Channel Polarity And Control Type (Non-Core)
p-channel insulated gate type
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Terminal Length
0.500 inches minimum