MJ11015
Semiconductor Devices and Associated Hardware
TRANSISTOR
MJ11015
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
200.0 watts large-signal output power, common-base nanoamperes
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Overall Height
0.690 inches minimum and 0.780 inches maximum
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Current Rating Per Characteristic
30.00 amperes all primaries maximum and 1.00 amperes all primaries minimum
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Voltage Rating In Volts Per Characteristic
120.0 maximum collector-to-emitter, substaining voltage, base open-circuited and 120.0 maximum breakover voltage, instantaneous
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Inclosure Material
metal
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Terminal Length
0.440 inches minimum and 0.480 inches maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Internal Configuration
junction contact-darlington connected
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Overall Length
1.550 inches maximum
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Semiconductor Material
silicon
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Overall Width
1.050 inches maximum
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Terminal Type And Quantity
2 uninsulated wire lead
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Special Features
junction pattern arrangement: npn
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Transfer Ratio
4.0 minimum small-signal short-circuit forward current transfer ratio, common-collector
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Mounting Method
terminal
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Electrode Internally-Electrically Connected To Case
collector
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
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