SD1019-9
Semiconductor Devices and Associated Hardware
TRANSISTOR
SD1019-9
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Length
0.850 inches nominal
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Internal Configuration
junction contact
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Internal Junction Configuration
npn
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Semiconductor Material
silicon
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Power Rating Per Characteristic
140.0 watts maximum total power dissipation
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Terminal Type And Quantity
4 ribbon
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Inclosure Material
metal
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Overall Height
0.285 inches nominal
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Overall Width
0.850 inches nominal
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Mounting Facility Quantity
2
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Mounting Method
unthreaded hole
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage,collector-to-emitter,with base short-circuited to emitter and 4.0 maximum breakdown voltage,emitter-to-base,collector open and 35.0 maximum breakdown voltage,collector-to-emitter,base open
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Current Rating Per Characteristic
12.00 amperes maximum collector current,dc
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction