8001204JB

Technical Characteristics

• Body Width

  0.500 inches minimum and 0.610 inches maximum

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Features Provided

  monolithic and hermetically sealed and programmable and electrostatic sensitive and ultraviolet erasable

• Storage Temp Range

  -65.0/+125.0 deg celsius

• Body Height

  0.210 inches nominal

• Time Rating Per Chacteristic

  450.00 nanoseconds maximum propagation delay time, low to high level output

• Voltage Rating And Type Per Characteristic

  6.0 volts maximum power source

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Memory Device Type

  rom

• Case Outline Source And Designator

  d-3 mil-m-38510

• Inclosure Material

  ceramic

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Bit Quantity (Non-Core)

  32768

• Word Quantity (Non-Core)

  4096

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Input Circuit Pattern

  14 input

• Body Length

  1.290 inches maximum