N82S115F

Technical Characteristics

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Bit Quantity

  4096

• Word Quantity

  512

• Terminal Surface Treatment

  solder

• Time Rating Per Chacteristic

  60.00 nanoseconds maximum propagation delay time,low to high level output

• Memory Device Type

  rom

• Terminal Type And Quantity

  24 printed circuit

• Body Length

  1.235 inches minimum and 1.290 inches maximum

• Body Width

  0.560 inches maximum

• Body Height

  0.200 inches maximum

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Input Circuit Pattern

  12 input

• Operating Temp Range

  m0.0/p75.0 deg celsius

• Features Provided

  bipolar and hermetically sealed and programmable and programmed and schottky

• Inclosure Material

  ceramic and glass

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic