6844W10P007

Technical Characteristics

• Mounting Method

  threaded stud

• Mounting Facility Quantity

  1

• Current Rating Per Characteristic

  10.00 amperes source cutoff current maximum and 30.00 nanoamperes base current, dc preset

• Voltage Rating In Volts Per Characteristic

  80.0 nominal breakdown voltage, collector-to-emitter, base open

• Transfer Ratio

  50.0 minimum static forward current transfer ratio, common-emitter and 150.0 maximum static forward current transfer ratio, common-emitter

• Overall Width Across Flats

  0.423 inches minimum and 0.438 inches maximum

• Internal Configuration

  junction contact

• Special Features

  high power switching transistor; junction pattern arrangement: npn

• Overall Length

  0.970 inches minimum and 1.218 inches maximum

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-111

• Power Rating Per Characteristic

  30.0 watts small-signal input power, common-collector absolute

• Semiconductor Material

  silicon

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Terminal Type And Quantity

  2 uninsulated wire lead w/terminal lug and 1 wire hook

• Inclosure Material

  metal

• Overall Diameter

  0.505 inches nominal