20-00942-012
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
20-00942-012
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
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Technical Characteristics
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Test Data Document
00724-20-00942 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type
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Voltage Rating In Volts Per Characteristic
32.0 minimum breakdown voltage, collector-to-emitter, base open all transistor and 60.0 minimum breakdown voltage, collector-to-emitter, with base short-circuited to emitter all transistor and 4.0 minimum breakdown voltage, emitter-to-base, collector open
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~1
data on certain environmental and performance r
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~1
all transistor
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Transfer Ratio
100.0 maximum static forward current transfer ratio, common-emitter all transistor
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Component Name And Quantity
2 transistor
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Terminal Type And Quantity
8 ribbon
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Overall Length
0.900 inches nominal
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Mounting Method
press fit
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Precious Material And Location
leads gold
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End Item Identification
satellite communications set,an/wsc-3(v)9
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Current Rating Per Characteristic
7.00 amperes source cutoff current maximum all transistor
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Inclosure Material
ceramic and metal
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Power Rating Per Characteristic
270.0 watts small-signal input power, common-collector preset all transistor
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Overall Height
0.280 inches maximum
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Overall Width
0.735 inches maximum
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Precious Material
gold
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Semiconductor Material
silicon all transistor
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Special Features
ceramic case contains beryllium oxide - handle and dispose iaw hazmat procedures; transistor junction pattern arrangement: npn
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Features Provided
hermetically sealed case