SD1463-12H

Technical Characteristics

• Test Data Document

  00724-20-00942 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Voltage Rating In Volts Per Characteristic

  32.0 minimum breakdown voltage, collector-to-emitter, base open all transistor and 60.0 minimum breakdown voltage, collector-to-emitter, with base short-circuited to emitter all transistor and 4.0 minimum breakdown voltage, emitter-to-base, collector open

• ~1

  data on certain environmental and performance r

• ~1

  all transistor

• Transfer Ratio

  100.0 maximum static forward current transfer ratio, common-emitter all transistor

• Component Name And Quantity

  2 transistor

• Terminal Type And Quantity

  8 ribbon

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Overall Length

  0.900 inches nominal

• Mounting Method

  press fit

• Precious Material And Location

  leads gold

• End Item Identification

  satellite communications set,an/wsc-3(v)9

• Current Rating Per Characteristic

  7.00 amperes source cutoff current maximum all transistor

• Inclosure Material

  ceramic and metal

• Power Rating Per Characteristic

  270.0 watts small-signal input power, common-collector preset all transistor

• Overall Height

  0.280 inches maximum

• Overall Width

  0.735 inches maximum

• Precious Material

  gold

• Semiconductor Material

  silicon all transistor

• Special Features

  ceramic case contains beryllium oxide - handle and dispose iaw hazmat procedures; transistor junction pattern arrangement: npn

• Features Provided

  hermetically sealed case